Title :
Simulation of Spin Torque Devices with Inelastic Spin flip Scattering
Author :
Salahuddin, Sayeef ; Datta, Supriyo
Author_Institution :
Purdue Univ., West Lafayette
Abstract :
In this paper we present simulation results for spin torque devices. Our simulation is based on self consistent solution of non-equilibrium Green´s function (NEGF) method, which is used to describe the transport mechanism, and Landau-Lifshitz-Gilbert (LLG) equation, which accounts for the magnetization dynamics. In addition to purely barrier dependent reflection/transmission, which is normally considered to be the sole contributor to spin torque, we also study the effects of spin flip scattering. From this, we show here, for the first time, that the presence of spin flip scattering may explain experimentally observed values for both (i) tunneling magneto resistance (TMR) and (ii) critical current at the same time, which, otherwise, cannot be explained in a coherent manner.
Keywords :
Green´s function methods; critical currents; magnetisation; magnetoelectronics; magnetoresistive devices; spin dynamics; tunnelling magnetoresistance; Landau-Lifshitz-Gilbert equation; barrier-dependent reflection; barrier-dependent transmission; critical current; inelastic spin flip scattering; magnetization dynamics; nonequilibrium Green´s function method; spin torque devices; tunneling magneto resistance; Computational modeling; Computer networks; Computer simulation; Critical current; Equations; Green´s function methods; Magnetization; Reflection; Scattering; Torque;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373739
