Semiconducting Graphene Ribbon Transistor

In this paper, the authors have demonstrated the fabrication of narrow graphene ribbons down to 20nm width, and confirmed that a semiconducting gap can be introduced to graphene by introducing boundary confinement. Boundary roughness and edge state effects have been observed in the transport properties of narrow ribbons, which remind us to be more cautious when dealing with these narrow ribbons in the context of high performance device applications.