Title :
Study on self-alignment property of silicon nanowire in temperature gradient
Author :
Jiang, Yanfeng ; Zhang, Xiaobo ; Yang, Bing
Author_Institution :
Microelectron. Center, North China Univ. of Technol., Beijing
Abstract :
A novel phenomenon about silicon nanowire(SiNW) is discussed here, which is related to its self-alignment characteristic when a temperature gradient field appears assisted by electric field. For the SiNW grown by vapor-liquid-solid method, it suffers an alignment force when its two terminals´ temperature is different. Experiments about this effects have been observed and it has been anticipated that this property can be used in assembling SiNW array. Furthermore, some explanations on this effect have been made in this paper.
Keywords :
elemental semiconductors; nanofabrication; nanowires; semiconductor growth; silicon; Si; electric field; self-alignment characteristics; silicon nanowire; temperature gradient field; vapor-liquid-solid method; Assembly; Chemical and biological sensors; Educational institutions; Gold alloys; Microelectronics; Nanobioscience; Nanoscale devices; Silicon alloys; Systems engineering and theory; Temperature; Self-alignment; Silicon Nanowire; Temperature Gradient;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
DOI :
10.1109/NEMS.2009.5068726
