Title :
Impact of Process Variation on Nanowire and Nanotube Device Performance
Author :
Paul, B.C. ; Fujita, S. ; Okajima, M. ; Lee, T. ; Wong, H.-S.P. ; Nishi, Y.
Author_Institution :
Stanford Univ., Stanford
Abstract :
We present an in-depth analysis of the nanowire and nanotube device performance under process variability. While every process parameter variation drastically affects the conventional MOSFET performance, we found that nanowire/nanotube FETs are significantly (> 4X) less sensitive to many process parameter variations.
Keywords :
field effect transistors; nanoelectronics; nanotube devices; nanowires; MOSFET performance; nanotube FET; nanotube device performance; nanowire FET; nanowire device performance; process variability; Capacitance; Carbon nanotubes; FETs; FinFETs; Geometry; Lithography; MOSFET circuits; Nanoscale devices; Nanotube devices; Wire;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373749
