• DocumentCode
    1960263
  • Title

    Role of Electrical and Thermal Contact Resistance in the High-Bias Joule Breakdown of Single-Wall Carbon Nanotube Devices

  • Author

    Pop, Eric

  • Author_Institution
    Univ. of Illinois at Urbana-Champaign, Urbana
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    273
  • Lastpage
    274
  • Abstract
    Several data sets of electrical breakdown in air of single-wall carbon nanotubes (SWNTs) on insulating substrates are collected and analyzed. These are data taken in different labs across the world on a wide range of SWNTs, spanning lengths 10 nm-8 mum, diameters 0.8 -3.2 nm and electrical contact resistance between 9-830 kOmega. A universal scaling of the Joule breakdown power with nanotube length is found, essentially independent of the insulating substrates used (here, SiO2, Si3N4, Al2O3). The electrical and thermal resistance at the nanotube-electrode contacts regulate the breakdown behavior for short (L < 0.6 mum) SWNTs, whereas the breakdown power scales linearly with length for longer tubes.
  • Keywords
    carbon nanotubes; contact resistance; nanotube devices; semiconductor device breakdown; electrical breakdown; electrical contact resistance; high-bias Joule breakdown; insulating substrates; nanotube length; nanotube-electrode contacts; single-wall carbon nanotube devices; thermal contact resistance; Aggregates; Carbon nanotubes; Contact resistance; Electric breakdown; Electric resistance; Insulation; Temperature; Thermal conductivity; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373751
  • Filename
    4373751