DocumentCode
1960263
Title
Role of Electrical and Thermal Contact Resistance in the High-Bias Joule Breakdown of Single-Wall Carbon Nanotube Devices
Author
Pop, Eric
Author_Institution
Univ. of Illinois at Urbana-Champaign, Urbana
fYear
2007
fDate
18-20 June 2007
Firstpage
273
Lastpage
274
Abstract
Several data sets of electrical breakdown in air of single-wall carbon nanotubes (SWNTs) on insulating substrates are collected and analyzed. These are data taken in different labs across the world on a wide range of SWNTs, spanning lengths 10 nm-8 mum, diameters 0.8 -3.2 nm and electrical contact resistance between 9-830 kOmega. A universal scaling of the Joule breakdown power with nanotube length is found, essentially independent of the insulating substrates used (here, SiO2, Si3N4, Al2O3). The electrical and thermal resistance at the nanotube-electrode contacts regulate the breakdown behavior for short (L < 0.6 mum) SWNTs, whereas the breakdown power scales linearly with length for longer tubes.
Keywords
carbon nanotubes; contact resistance; nanotube devices; semiconductor device breakdown; electrical breakdown; electrical contact resistance; high-bias Joule breakdown; insulating substrates; nanotube length; nanotube-electrode contacts; single-wall carbon nanotube devices; thermal contact resistance; Aggregates; Carbon nanotubes; Contact resistance; Electric breakdown; Electric resistance; Insulation; Temperature; Thermal conductivity; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373751
Filename
4373751
Link To Document