DocumentCode :
1960357
Title :
Studies Of Frequency Dependent C-V Characteristics Of Neutron Irradiated P+-n Silicon Detectors
Author :
Li, Zheng ; Kraner, H.W.
Author_Institution :
Brookhaven National Laboratory
fYear :
1990
fDate :
22-27 Oct 1990
Firstpage :
854
Lastpage :
860
Keywords :
Capacitance; Capacitance-voltage characteristics; Conductivity; Detectors; Electron traps; Frequency dependence; Neutrons; Semiconductor process modeling; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium, 1990. Conference record : Including Sessions on Nuclear Power Systems and Medical Imaging Conference, 1990 IEEE
Print_ISBN :
0-87942-683-7
Type :
conf
DOI :
10.1109/NSSMIC.1990.693473
Filename :
693473
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1960357
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