Title : 
Direct transistor-level layout for digital blocks
         
        
            Author : 
Gopalakrishnan, P. ; Rutenbar, R.A.
         
        
            Author_Institution : 
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
         
        
        
        
        
        
            Abstract : 
We present a complete transistor-level layout flow, from logic netlist to final shapes, for blocks of combinational logic up to a few thousand transistors in size. The direct transistor-level attack easily accommodates the demands for careful custom sizing necessary in high-speed design, and is also significantly denser than a comparable cell-based layout. The key algorithmic innovations are (a) early identification of essential diffusion-merged MOS device groups called clusters, but (b) deferred binding of clusters to a specific shape-level layout until the very end of a multi-phase placement strategy. A global placer arranges uncommitted clusters; a detailed placer optimizes clusters at shape level for density and for overall routability. A commercial router completes the flow. Experiments comparing to a commercial standard cell-level layout flow show that, when flattened to transistors, our tool consistently achieves 100% routed layouts that average 23% less area.
         
        
            Keywords : 
VLSI; cellular arrays; circuit layout CAD; circuit optimisation; combinational circuits; integrated circuit layout; integrated logic circuits; logic CAD; network routing; cluster binding; combinational logic; diffusion-merged MOS device groups; digital VLSI circuit; global routability; high-speed design; multi-phase placement algorithm; optimization; standard cell; transistor-level layout; Circuits; Clustering algorithms; Design methodology; Logic devices; MOS devices; Shape; Software libraries; Technological innovation; Timing; Very large scale integration;
         
        
        
        
            Conference_Titel : 
Computer Aided Design, 2001. ICCAD 2001. IEEE/ACM International Conference on
         
        
            Conference_Location : 
San Jose, CA, USA
         
        
        
            Print_ISBN : 
0-7803-7247-6
         
        
        
            DOI : 
10.1109/ICCAD.2001.968713