Subpicosecond carrier capture into intermixed InGaAs/GaAs quantum dots

Author

Marcinkevicius, S. ; Leon, R.

Author_Institution

Dept. of Phys. II, R. Inst. of Technol., Stockholm, Sweden

fYear

1998

fDate

8-8 May 1998

Firstpage

164

Abstract

Summary form only given. We report picosecond and subpicosecond carrier capture times. The measurements were performed on as-grown and intermixed In/sub 0.5/Ga/sub 0.5/As-GaAs quantum dots by time-resolved photoluminescence (PL). The studied quantum dots were grown by metalorganic chemical vapor deposition. Intermixing was performed by postgrowth thermal annealing.

Keywords

III-V semiconductors; MOCVD; annealing; gallium arsenide; high-speed optical techniques; indium compounds; photoluminescence; semiconductor quantum dots; time resolved spectra; In/sub 0.5/Ga/sub 0.5/As-GaAs; as-grown; intermixed In/sub 0.5/Ga/sub 0.5/As-GaAs quantum dots; intermixed InGaAs/GaAs quantum dots; intermixing; metalorganic chemical vapor deposition; picosecond carrier capture times; postgrowth thermal annealing; subpicosecond carrier capture; subpicosecond carrier capture times; time-resolved photoluminescence; Gallium arsenide; Indium gallium arsenide; Particle scattering; Phonons; Plasma confinement; Plasma materials processing; Plasma temperature; Quantum dots; Temperature dependence; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680338

Filename

680338