DocumentCode :
1960850
Title :
Considering copper anisotropy for advanced TSV-modeling
Author :
Saettler, Peter ; Meier, Karsten ; Wolter, Klaus-juergen
Author_Institution :
Electron. Packaging Lab., Tech. Univ. Dresden, Dresden, Germany
fYear :
2011
fDate :
11-15 May 2011
Firstpage :
419
Lastpage :
423
Abstract :
This paper demonstrates that in case of e-plated copper in TSVs isotropic material behavior is not in every case an acceptable simplification for calculations. The investigation presents a method to extract effective elastic moduli of copper grain structures in TSVs using Electron Backscatter Diffraction-measurement (EBSD) and FE-simulation. The effective elastic moduli represent the averaged anisotropic behavior of the grain structure. A simplified model without grain structures using the calculated effective moduli instead can be implemented for further simulations. Results of the presented procedure are compared to results of common material assumptions.
Keywords :
copper; finite element analysis; three-dimensional integrated circuits; Cu; FE-simulation; TSV-modeling; anisotropy; effective moduli; elastic moduli; electron backscatter diffraction-measurement; grain structures; isotropic material; Copper; Crystals; Strain; Tensile stress; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology (ISSE), 2011 34th International Spring Seminar on
Conference_Location :
Tratanska Lomnica
ISSN :
2161-2528
Print_ISBN :
978-1-4577-2111-3
Type :
conf
DOI :
10.1109/ISSE.2011.6053899
Filename :
6053899
Link To Document :
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