DocumentCode :
1961257
Title :
A new SOI structure for mixed mode ICs and its body-related characteristics
Author :
Lee, H. ; Lee, Joun-Ho ; Park, Y.-J. ; Min, H.S.
Author_Institution :
ISRC & Electr. Eng., Seoul Nat. Univ., South Korea
fYear :
1998
fDate :
5-8 Oct. 1998
Firstpage :
63
Lastpage :
64
Abstract :
A new SOI structure is proposed in order to suppress both the floating body effect in thick SOI films for the analog circuit region and degradation in the source/drain resistance in thin SOI films for the digital circuit region. We report experimental results showing the dependence of the kink effect and the operational current on the body resistance, and thereby the body contact design rule can be found.
Keywords :
electric resistance; integrated circuit design; integrated circuit reliability; integrated circuit testing; mixed analogue-digital integrated circuits; silicon-on-insulator; SOI structure; Si-SiO/sub 2/; analog circuit region; body contact design rule; body resistance; body-related characteristics; digital circuit region; floating body effect; kink effect; mixed mode ICs; operational current; source/drain resistance degradation; thick SOI films; thin SOI films; Analog integrated circuits; Analog-digital conversion; Analog-digital integrated circuits; Application specific integrated circuits; Digital circuits; Immune system; Implants; MOS devices; Semiconductor films; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1998. Proceedings., 1998 IEEE International
Conference_Location :
Stuart, FL, USA
ISSN :
1078-621X
Print_ISBN :
0-7803-4500-2
Type :
conf
DOI :
10.1109/SOI.1998.723112
Filename :
723112
Link To Document :
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