Miniature multilayer spiral inductors for GaAs MMICs

Author

Geen, M.W. ; Green, G.J. ; Arnold, R.G. ; Jenkins, J.A. ; Jansen, R.H.

Author_Institution

Plessey Three Five Group, Towcester, UK

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

303

Lastpage

306

Abstract

A model approach is presented for reducing the area consumed by MMIC (monolithic microwave integrated circuit) spiral inductors by exploiting a multilayer MMIC process. These spiral inductors can be designed to have inductance values as high as 20 nH but occupy areas of less than 0.1 mm/sup 2/. A simple analysis is presented to estimate the prime inductance, and the results of geometric optimization using a two-level electromagnetic field analysis are shown. A practical equivalent circuit has been developed together with a set of design equations. A miniaturized amplifier has been produced to demonstrate the successful application of the component.<>

Keywords

III-V semiconductors; MMIC; electromagnetic fields; equivalent circuits; gallium arsenide; inductors; microwave amplifiers; GaAs; MMIC; area; design equations; equivalent circuit; geometric optimization; inductance values; miniaturized amplifier; multilayer process; prime inductance; spiral inductors; two-level electromagnetic field analysis; Electromagnetic analysis; Gallium arsenide; Inductance; Inductors; Integrated circuit modeling; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Nonhomogeneous media; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69348

Filename

69348