Title :
Photoluminescence investigation of GaAs quantum nanostructures
Author :
Pödör, Bálint ; Nemcsics, Ákos ; Balázs, János ; Makai, János ; Stemmann, Andrea
Author_Institution :
Microelectron. & Technol. Inst., Obuda Univ., Budapest, Hungary
Abstract :
We have studied the optical properties of droplet epitaxial quantum dots and quantum rings in the GaAs/GaAlAs system. Photoluminescence spectra measurements were performed in the temperature range from 4 to 300 K. The differences between the observed spectra and the electronic structure of quantum dots and quantum rings are briefly discussed.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; nanostructured materials; photoluminescence; semiconductor epitaxial layers; semiconductor quantum dots; GaAs-GaAlAs; band gap; droplet epitaxial quantum dots; droplet epitaxial quantum rings; electronic structure; optical properties; photoluminescence; quantum nanostructures; temperature 4 K to 300 K; Epitaxial growth; Gallium arsenide; Photoluminescence; Photonic band gap; Quantum dots; Temperature dependence; Temperature measurement;
Conference_Titel :
Electronics Technology (ISSE), 2011 34th International Spring Seminar on
Conference_Location :
Tratanska Lomnica
Print_ISBN :
978-1-4577-2111-3
DOI :
10.1109/ISSE.2011.6053945
