DocumentCode
1961911
Title
A 435 MHz high-gain low-power LNA in 0.35 μm SOI CMOS
Author
Huang, Douglas ; Zencir, E. ; Dogan, Numan S. ; Arvas, Ercument
Author_Institution
North Carolina Agric. & Tech. State Univ., Greensboro, NC, USA
fYear
2003
fDate
30 June-2 July 2003
Firstpage
116
Lastpage
119
Abstract
A low-power, high-gain, fully-differential low noise amplifier (LNA) in 0.35 -μm SOI CMOS technology is designed and tested. The LNA is intended for use as the amplification stage in a subsampling receiver at UHF frequency. The measured 46-dB small signal gain, 3-dB noise figure, and 19-mW total power consumption is reported for the first time.
Keywords
UHF power amplifiers; differential amplifiers; gain measurement; power transistors; semiconductor device noise; silicon-on-insulator; 0.35 micron; 19 mW; 3 dB; 435 MHz; 46 dB; SOI CMOS; Si; UHF; amplification stage; differential LNA; differential low noise amplifier; noise figure; subsampling receiver; CMOS technology; Frequency; Gain measurement; Low-noise amplifiers; Noise figure; Noise measurement; Power measurement; Testing; Time measurement; UHF measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
ISSN
0749-6877
Print_ISBN
0-7803-7972-1
Type
conf
DOI
10.1109/UGIM.2003.1225709
Filename
1225709
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