Title :
A 443-µA 37.8-nV/√Hz CMOS multi-stage bandgap voltage reference
Author :
Weixun Yan ; Christen, Thomas
Author_Institution :
ams AG, Rapperswil, Switzerland
Abstract :
A CMOS bandgap voltage reference is presented, which achieves a low integrated noise of 150nVrms within a 0.1-10Hz bandwidth and a 37.8nV/√Hz wideband noise floor above 100Hz. The low noise performance is accomplished by employing a multi-stage bandgap topology, which results in an inherent noise advantage compared to a conventional CMOS bandgap. Fabricated in a 0.35μm HV CMOS technology, the bandgap voltage reference consumes 443μA from a nominal 3.4-V supply and occupies 0.5mm2 chip area.
Keywords :
CMOS integrated circuits; integrated circuit manufacture; reference circuits; CMOS multi-stage bandgap voltage reference; bandwidth 0.1 Hz to 10 Hz; current 443 muA; multi-stage bandgap topology; size 0.35 mum; voltage 3.4 V; CMOS integrated circuits; CMOS technology; Noise; Noise measurement; Photonic band gap; Temperature measurement; Voltage measurement;
Conference_Titel :
ESSCIRC (ESSCIRC), 2013 Proceedings of the
Conference_Location :
Bucharest
Print_ISBN :
978-1-4799-0643-7
DOI :
10.1109/ESSCIRC.2013.6649080
