• DocumentCode
    1961914
  • Title

    A 443-µA 37.8-nV/√Hz CMOS multi-stage bandgap voltage reference

  • Author

    Weixun Yan ; Christen, Thomas

  • Author_Institution
    ams AG, Rapperswil, Switzerland
  • fYear
    2013
  • fDate
    16-20 Sept. 2013
  • Firstpage
    93
  • Lastpage
    96
  • Abstract
    A CMOS bandgap voltage reference is presented, which achieves a low integrated noise of 150nVrms within a 0.1-10Hz bandwidth and a 37.8nV/√Hz wideband noise floor above 100Hz. The low noise performance is accomplished by employing a multi-stage bandgap topology, which results in an inherent noise advantage compared to a conventional CMOS bandgap. Fabricated in a 0.35μm HV CMOS technology, the bandgap voltage reference consumes 443μA from a nominal 3.4-V supply and occupies 0.5mm2 chip area.
  • Keywords
    CMOS integrated circuits; integrated circuit manufacture; reference circuits; CMOS multi-stage bandgap voltage reference; bandwidth 0.1 Hz to 10 Hz; current 443 muA; multi-stage bandgap topology; size 0.35 mum; voltage 3.4 V; CMOS integrated circuits; CMOS technology; Noise; Noise measurement; Photonic band gap; Temperature measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC (ESSCIRC), 2013 Proceedings of the
  • Conference_Location
    Bucharest
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4799-0643-7
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2013.6649080
  • Filename
    6649080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1961914