Title :
Transition from generation- to recombination-based transients in partially depleted SOI MOSFETs
Author :
Munteanu, D. ; Cristoloveanu, S. ; Faynot, O.
Author_Institution :
LPCS, CNRS, Grenoble, France
Abstract :
Summary form only given. The thorough analysis of transient mechanisms in partially depleted SOI devices is of primary importance due to the impact of time-dependent floating-body effects on IC operation. Undesirable drain current overshoot or undershoot occurs when the transistor is turned-on or -off, respectively, leading to current glitches. An original situation is presented and modeled in this work: simultaneous pulses applied to the front and back gate can modify the shape and magnitude of the current transient by involving a combination of generation and recombination mechanisms. Our analytical n-MOSFET model is simple enough to be included in circuit simulators such as SOI-SPICE.
Keywords :
MOSFET; SPICE; carrier lifetime; circuit simulation; electron-hole recombination; integrated circuit modelling; semiconductor device models; silicon-on-insulator; transient analysis; IC operation; SOI-SPICE; Si-SiO/sub 2/; circuit simulators; current glitch; current transient magnitude; current transient shape; drain current overshoot; drain current undershoot; generation mechanisms; generation-based transients; generation-to-recombination-based transient transition; n-MOSFET model; partially depleted SOI MOSFETs; partially depleted SOI devices; recombination mechanisms; recombination-based transients; simultaneous front/back gate pulses; time-dependent floating-body effects; transient mechanisms; transistor turn-off; transistor turn-on; AC generators; Charge carrier lifetime; Electrons; Equations; Joining processes; Linear predictive coding; MOSFETs; Meetings; Pulse measurements; Transient analysis;
Conference_Titel :
SOI Conference, 1998. Proceedings., 1998 IEEE International
Conference_Location :
Stuart, FL, USA
Print_ISBN :
0-7803-4500-2
DOI :
10.1109/SOI.1998.723116
