An S-Band Gallium Arsenide Field Effect Transistor

Author

Turner, A. ; Waller, J.

Author_Institution

Plessey Company Limited at the Allen Clark Research Centre, Caswell, Towcester, Northants.

fYear

1969

fDate

8-12 Sept. 1969

Firstpage

480

Lastpage

482

Keywords

Bonding; Capacitance; Electron mobility; FETs; Frequency; Gallium arsenide; Noise figure; Silicon; Substrates; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1969. 1st European

Conference_Location

London, UK

Type

DOI

10.1109/EUMA.1969.331950

Filename

4130619

Link To Document