Title :
Effects of buried oxide thickness on electrical characteristics of LOCOS-isolated thin-film SOI MOSFETs
Author :
Lee, J.-W. ; Nam, M.-H. ; Oh, J.-H. ; Yang, J.-W. ; Lee, W.-C. ; Kim, H.-K. ; Oh, M.-R. ; Koh, Y.-H.
Author_Institution :
Semicond. Res. Div., Hyundai Electron. Ind. Co. Ltd., Kyoungki-do, South Korea
Abstract :
It is known that the electrical characteristics of thin-film SOI MOSFETs depend on many physical parameters, such as Si film thickness and process conditions. Several researchers have reported the effects of the buried oxide and its interface on redistribution of boron atoms (Crowder et al. 1993; Park et al. 1995). In this work, we have investigated the stress behaviour in the buried oxide (BOX) interface relative to BOX thickness and its effects on LOCOS-isolated thin-film SOI MOSFET (i.e. both n- and p-MOSFETs) characteristics by experiment and simulation. It was noted that thin-film SOI MOSFETs with a thin BOX show a higher threshold voltage and hole mobility than those with a thick BOX due to the silicon film stress.
Keywords :
MOSFET; buried layers; doping profiles; hole mobility; interface states; interface structure; internal stresses; isolation technology; oxidation; semiconductor device models; semiconductor device testing; silicon-on-insulator; stress analysis; LOCOS-isolated thin-film SOI MOSFETs; Si film thickness; Si-SiO/sub 2/; boron atom redistribution; buried oxide; buried oxide interface; buried oxide thickness effects; electrical characteristics; hole mobility; n-MOSFETs; p-MOSFETs; physical parameters; process conditions; silicon film stress; simulation; stress behaviour; thin-film SOI MOSFETs; threshold voltage; Compressive stress; Electric variables; Intrusion detection; MOSFETs; Semiconductor films; Silicon; Substrates; Tensile stress; Transistors; Voltage;
Conference_Titel :
SOI Conference, 1998. Proceedings., 1998 IEEE International
Conference_Location :
Stuart, FL, USA
Print_ISBN :
0-7803-4500-2
DOI :
10.1109/SOI.1998.723117
