DocumentCode
1962347
Title
Gate-controlled punch through transistor
Author
Li, Xiangli ; Pan, Huadian ; Wilamowski, Bogdan M.
Author_Institution
Dept. of Electr. Eng., Idaho Univ., Boise, ID, USA
fYear
2003
fDate
30 June-2 July 2003
Firstpage
226
Lastpage
229
Abstract
Operation of the gate-controlled punch through transistor is demonstrated in this paper. The characteristics of the device are simulated using SILVACO atlas device simulator. This device shows high voltage, high operation frequency, and low noise properties. This punch through device can be used in high power control circuit, and also can be used for fast analog circuits for multiplication, squaring and root calculation.
Keywords
semiconductor device models; semiconductor device noise; static induction transistors; analog circuits; gate-controlled punch; high operation frequency; power control circuit; transistor; Analog circuits; Circuit noise; Circuit simulation; Equations; Frequency; MOSFETs; Power control; Shape; Temperature control; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
ISSN
0749-6877
Print_ISBN
0-7803-7972-1
Type
conf
DOI
10.1109/UGIM.2003.1225731
Filename
1225731
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