Title :
A 40µW CMOS temperature sensor with an inaccuracy of ±0.4°C (3σ) from −55°C to 200°C
Author :
Souri, K. ; Souri, K. ; Makinwa, Kofi
Author_Institution :
Electron. Instrum. Lab., Delft Univ. of Technol., Delft, Netherlands
Abstract :
This paper describes a BJT-based precision CMOS temperature sensor for high temperature (>150°C) applications. By optimizing the bias currents of the sensing BJTs and the design of the readout circuit, the impact of leakage and saturation currents at high temperatures is reduced. The sensor was implemented in a 0.16-μm CMOS SOI process and operates from -55°C to 200°C, achieving an inaccuracy of ±0.4°C (3σ) after a trim at 30°C. In a conversion time of 5.3msec, it achieves a resolution of 20mK, while drawing 22μA from a 1.8V supply.
Keywords :
CMOS integrated circuits; bipolar transistors; integrated circuit design; leakage currents; silicon-on-insulator; temperature sensors; BJT-based precision CMOS temperature sensor; SOI process; bias currents; bipolar junction transistor; current 22 muA; high temperature applications; leakage currents; readout circuit design; saturation currents; size 0.16 mum; temperature -55 degC to 200 degC; time 5.3 ms; voltage 1.8 V; CMOS integrated circuits; Capacitors; Leakage currents; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors;
Conference_Titel :
ESSCIRC (ESSCIRC), 2013 Proceedings of the
Conference_Location :
Bucharest
Print_ISBN :
978-1-4799-0643-7
DOI :
10.1109/ESSCIRC.2013.6649112
