A 40µW CMOS temperature sensor with an inaccuracy of ±0.4°C (3σ) from −55°C to 200°C

Author

Souri, K. ; Souri, K. ; Makinwa, Kofi

Author_Institution

Electron. Instrum. Lab., Delft Univ. of Technol., Delft, Netherlands

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

221

Lastpage

224

Abstract

This paper describes a BJT-based precision CMOS temperature sensor for high temperature (>150°C) applications. By optimizing the bias currents of the sensing BJTs and the design of the readout circuit, the impact of leakage and saturation currents at high temperatures is reduced. The sensor was implemented in a 0.16-μm CMOS SOI process and operates from -55°C to 200°C, achieving an inaccuracy of ±0.4°C (3σ) after a trim at 30°C. In a conversion time of 5.3msec, it achieves a resolution of 20mK, while drawing 22μA from a 1.8V supply.

Keywords

CMOS integrated circuits; bipolar transistors; integrated circuit design; leakage currents; silicon-on-insulator; temperature sensors; BJT-based precision CMOS temperature sensor; SOI process; bias currents; bipolar junction transistor; current 22 muA; high temperature applications; leakage currents; readout circuit design; saturation currents; size 0.16 mum; temperature -55 degC to 200 degC; time 5.3 ms; voltage 1.8 V; CMOS integrated circuits; Capacitors; Leakage currents; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

ESSCIRC (ESSCIRC), 2013 Proceedings of the

Conference_Location

Bucharest

ISSN

1930-8833

Print_ISBN

978-1-4799-0643-7

Type

conf

DOI

10.1109/ESSCIRC.2013.6649112

Filename

6649112