Title :
Surface Plasmon Leakage in Its Coupling with an InGaN/GaN Quantum Well through an Ohmic Contact
Author :
Yeh, Dong-Ming ; Huang, Chi-Feng ; Lu, Yen-Cheng ; Chen, Cheng-Yen ; Tang, Tsung-Yi ; Huang, Jeng-Jie ; Shen, Kun-Ching ; Yang, Ying-Jay ; Yang, C.C.
Author_Institution :
Nati. Taiwan Univ., Taipei
fDate :
Aug. 12 2007-July 16 2007
Abstract :
We demonstrate the loss of surface plasmon (SP) energy through oscillating electron leakage via the ohmic contact of either p-type or n-type GaN layer in the coupling process between SP and an InGaN/GaN quantum well (QW). The observation implies that in using the SP-QW coupling for enhancing emission in a light-emitting diode, the metals for ohmic contact and SP generation must be separated. A thin dielectric interlayer is required in the region for SP-QW coupling to avoid the leakage of SP energy.
Keywords :
III-V semiconductors; dielectric materials; gallium compounds; indium compounds; light emitting diodes; ohmic contacts; semiconductor quantum wells; surface plasmons; InGaN-GaN; InGaN-GaN - Interface; InGaN/GaN quantum well; SP-QW coupling; dielectric interlayer; light-emitting diode; n-type GaN layer; ohmic contact; oscillating electron leakage; p-type GaN layer; surface plasmon energy leakage; Coatings; Doping; Electrons; Gallium nitride; Impurities; Light emitting diodes; Ohmic contacts; Optical coupling; Plasmons; Power engineering and energy; Ohmic contact; quantum well; surface plasmon;
Conference_Titel :
Optical MEMS and Nanophotonics, 2007 IEEE/LEOS International Conference on
Conference_Location :
Hualien
Print_ISBN :
978-1-4244-0641-8
DOI :
10.1109/OMEMS.2007.4373872
