Title :
A planner 6.3 nm thin-body SOI MOSFET using tunnel epitaxy and nitrided gate oxides
Author :
Ahmed, Shibly S. ; Neudeck, Gerold W. ; Denton, John P. ; Stidham, Mark E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
30 June-2 July 2003
Abstract :
A single-gate UTB SOI MOSFET was fabricated using tunnel epitaxy to form the silicon channel as thin as 6.3 nm. Experimental electrical measurements were conducted on a variety of devices, and the results are summarized. Low leakage currents were measured including gate leakage of 15 pA and device leakage of 1.1 pA. Measured I□V characteristics also included subthreshold slopes of 67 mV/dec., DIBL of 10 mV/V, and drive currents up to 280□A.
Keywords :
MOSFET; leakage currents; silicon-on-insulator; thin film transistors; 1.1 pA; 15 pA; 6.3 nm; I-V characteristics; Si-SiO2; device leakage current; drive currents; gate leakage current; nitrided gate oxides; silicon channel; subthreshold slopes; tunnel epitaxy; ultra thin body SOI MOSFET; Current measurement; Doping; Electric variables measurement; Epitaxial growth; Fabrication; Gate leakage; Grain boundaries; Leakage current; MOSFET circuits; Silicon;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225743
