Title :
Characteristics of Dual-Gate GaAs Mesfets
Author :
Liechti, Charles A.
Author_Institution :
Hewlett-Packard Company, Solid-State Laboratory, Palo Alto, CA 94304 USA.
Keywords :
Circuits; Gain measurement; Gallium arsenide; Impedance; MESFETs; Noise figure; Phase modulation; Radio frequency; Reflection; Scattering parameters;
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
DOI :
10.1109/EUMA.1974.332018
