DocumentCode

1962679

Title

Characteristics of Dual-Gate GaAs Mesfets

Author

Liechti, Charles A.

Author_Institution

Hewlett-Packard Company, Solid-State Laboratory, Palo Alto, CA 94304 USA.

fYear

1974

fDate

10-13 Sept. 1974

Firstpage

87

Lastpage

91

Keywords

Circuits; Gain measurement; Gallium arsenide; Impedance; MESFETs; Noise figure; Phase modulation; Radio frequency; Reflection; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1974. 4th European

Conference_Location

Montreux, Switzerland

Type

conf

DOI

10.1109/EUMA.1974.332018

Filename

4130659