Title :
Gallium Arsenide Fieid Effect Transistors - their Performance and Application Up to X-Band Frequencies
Author_Institution :
Allen Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants. NN12 8EQ
Abstract :
The microwave performance of GaAs FET´s is reviewed and examples of their application in systems operating up to X-band frequencies discussed. Examples of amplifiers (one giving 42 dB gain at 11.2 GHz) and oscillators operating at frequencies hitherto unattainable by 2-port solid state devices are used to illustrate the performance and potential of GaAs FET´s in microwave systems.
Keywords :
Cutoff frequency; Gallium arsenide; L-band; Low-noise amplifiers; Microstrip; Microwave FETs; Microwave amplifiers; Microwave devices; Noise figure; Performance gain;
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
DOI :
10.1109/EUMA.1974.332019
