DocumentCode
1962694
Title
A method to overcome self-heating effects in SOI MOSFETs
Author
Cole, Bryan ; Parke, Stephen
Author_Institution
Micron Technol., Boise, ID, USA
fYear
2003
fDate
30 June-2 July 2003
Firstpage
295
Lastpage
297
Abstract
Self heating of a MOS device will reduce performance. Drain current decreases and long term reliability can be affected. In SOI devices, self-heating is an even greater problem due to the buried oxide. By adding a path from SOI to substrate that has a high thermal conductivity and low electrical conductivity, the negative effects of self-heating can be reduced.
Keywords
MIS devices; MOSFET; electrical conductivity; semiconductor device reliability; silicon-on-insulator; thermal conductivity; MOS device; SOI MOSFET; SOI devices; Si-SiO2; drain current; low electrical conductivity; reliability; self-heating effects; thermal conductivity; Conducting materials; Conductive films; Etching; Heat sinks; MOSFETs; Resistance heating; Semiconductor films; Silicon compounds; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
ISSN
0749-6877
Print_ISBN
0-7803-7972-1
Type
conf
DOI
10.1109/UGIM.2003.1225747
Filename
1225747
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