Title :
A method to overcome self-heating effects in SOI MOSFETs
Author :
Cole, Bryan ; Parke, Stephen
Author_Institution :
Micron Technol., Boise, ID, USA
fDate :
30 June-2 July 2003
Abstract :
Self heating of a MOS device will reduce performance. Drain current decreases and long term reliability can be affected. In SOI devices, self-heating is an even greater problem due to the buried oxide. By adding a path from SOI to substrate that has a high thermal conductivity and low electrical conductivity, the negative effects of self-heating can be reduced.
Keywords :
MIS devices; MOSFET; electrical conductivity; semiconductor device reliability; silicon-on-insulator; thermal conductivity; MOS device; SOI MOSFET; SOI devices; Si-SiO2; drain current; low electrical conductivity; reliability; self-heating effects; thermal conductivity; Conducting materials; Conductive films; Etching; Heat sinks; MOSFETs; Resistance heating; Semiconductor films; Silicon compounds; Thermal conductivity; Voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225747
