Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs

Author

Duyet, T.N. ; Ishikuro, H. ; Takamiya, M. ; Saraya, T. ; Hiramoto, T.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

1998

fDate

5-8 Oct. 1998

Firstpage

79

Lastpage

80

Abstract

The geometry-dependent component in charge pumping current (I/sub cp/) is well known as the undesirable factor causing the overestimated interface state density in FD SOI devices (Brugler and Jespers, 1969; Groeseneken et al, 1984; Li and Ma, 1995). In this work, the effects of the body reverse pulse bias on the geometric component of I/sub cp/ in fully depleted (FD) SOI MOSFETs are described. The majority carriers of the high resistivity body region can be completely removed by a reverse pulse applied to the body. As a result, the geometry-dependent component is suppressed. This method also suppresses the reduction of effective channel length which takes place when using a DC reverse bias.

Keywords

MOSFET; carrier lifetime; electric current; electrical resistivity; electronic density of states; interface states; semiconductor device testing; silicon-on-insulator; DC reverse bias; FD SOI MOSFETs; FD SOI devices; Si-SiO/sub 2/; body reverse pulse bias; body reverse pulse bias effects; charge pumping current; charge pumping current geometric component; effective channel length; fully depleted SOI MOSFETs; geometry-dependent component suppression; high resistivity body region; interface state density; majority carriers; overestimated interface state density; reverse pulse; Charge pumps; Electron devices; Electron mobility; MOS devices; MOSFET circuits; Space vector pulse width modulation; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1998. Proceedings., 1998 IEEE International

Conference_Location

Stuart, FL, USA

ISSN

1078-621X

Print_ISBN

0-7803-4500-2

Type

conf

DOI

10.1109/SOI.1998.723120

Filename

723120