Title :
A Multi-Stage Solid State Amplifier
Author :
Bains, Amarjit S.
Author_Institution :
Microwave Division, G & E Bradley Limited, London, U.K.
Abstract :
A solid state X-band amplifier consisting of five cascaded stages is described. The amplifier is of hybrid type, where combination of high power silicon IMPATT amplifier modules with a Gunn diode pre-amplifier stage provides an output power of greater than 13. Owatts. The gain of the amplifier is 26-dB, with an instantaneous bandwidth of 100MHz. Descriptions of single diode and multiple-diode amplifier cavities are given. Measured performance is given on similar single and multiple-diode amplifier stages. Data included is, input and output power characteristics, AM to PM conversion, noise and temperature. No spurious oscillators were observed in any of the stages of the amplifier.
Keywords :
Bandwidth; Diodes; Gunn devices; High power amplifiers; Oscillators; Power amplifiers; Power generation; Silicon; Solid state circuits; Temperature;
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
DOI :
10.1109/EUMA.1974.332023
