DocumentCode
1962791
Title
A Multi-Stage Solid State Amplifier
Author
Bains, Amarjit S.
Author_Institution
Microwave Division, G & E Bradley Limited, London, U.K.
fYear
1974
fDate
10-13 Sept. 1974
Firstpage
113
Lastpage
117
Abstract
A solid state X-band amplifier consisting of five cascaded stages is described. The amplifier is of hybrid type, where combination of high power silicon IMPATT amplifier modules with a Gunn diode pre-amplifier stage provides an output power of greater than 13. Owatts. The gain of the amplifier is 26-dB, with an instantaneous bandwidth of 100MHz. Descriptions of single diode and multiple-diode amplifier cavities are given. Measured performance is given on similar single and multiple-diode amplifier stages. Data included is, input and output power characteristics, AM to PM conversion, noise and temperature. No spurious oscillators were observed in any of the stages of the amplifier.
Keywords
Bandwidth; Diodes; Gunn devices; High power amplifiers; Oscillators; Power amplifiers; Power generation; Silicon; Solid state circuits; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1974. 4th European
Conference_Location
Montreux, Switzerland
Type
conf
DOI
10.1109/EUMA.1974.332023
Filename
4130664
Link To Document