DocumentCode
1962843
Title
Fabrication of an MOS Capacitor structure at NGEE ANN POLYTECHNIC´s IC fabrication facility
Author
Philip, Matthew
Author_Institution
Microelectron. Design & Application Center, Ngee Ann Polytech., Singapore, Singapore
fYear
2003
fDate
30 June-2 July 2003
Firstpage
328
Lastpage
329
Abstract
This paper describes an attempt to build and test MOS Capacitor structures at NGEE ANN POLYTECHNIC. This project was undertaken by a group of students. Details of the process flow and test strategies utilized are provided. Problems encountered and solutions taken are reported. The impact of the exercise on student learning is assessed.
Keywords
MOS capacitors; integrated circuit design; masks; IC fabrication; MOS capacitor; Application specific integrated circuits; Circuit testing; Conductivity; Design engineering; Drilling; Fabrication; Integrated circuit testing; MOS capacitors; Microelectronics; Process design;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
ISSN
0749-6877
Print_ISBN
0-7803-7972-1
Type
conf
DOI
10.1109/UGIM.2003.1225755
Filename
1225755
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