Title :
Flexible PV technology development program at IIT Bombay
Author :
Duttagupta, Siddhartha P.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
fDate :
30 June-2 July 2003
Abstract :
This paper describes the ongoing flexible PV technology program at the Indian Institute of Technology Bombay. Flexible solar cells are fabricated by depositing amorphous silicon (a-Si) on stainless steel substrate. We have relied on hot-wire CVD technology to deposit films at 110 C, since conventional PECVD processes have proven to be inadequate at that temperature. The primary requirement was a high doping concentration of the p-type and n-type a-Si layers. The efficiency of the single-junction PV cells under simulated AM1.5 global radiation initially was 2.8%, which improved to 4.8% following optimization. Further improvements in efficiency will require development of a technique for low temperature texturing of the transparent conducting oxide film.
Keywords :
amorphous semiconductors; chemical vapour deposition; elemental semiconductors; photovoltaic cells; semiconductor growth; semiconductor thin films; silicon; 110 C; IIT Bombay; Indian Institute of Technology; PV technology development program; Si:H; amorphous silicon; doping concentration; flexible solar cells; hot-wire CVD technology; low temperature texturing; n-type Si layers; p-type Si layers; single-junction PV cells; stainless steel substrate; transparent conducting oxide film; Amorphous silicon; Conductive films; Crystallization; Fabrication; Paper technology; Photovoltaic cells; Plasma temperature; Space technology; Steel; Substrates;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225767