InP-based 1310-1550 nm lattice-matched VCSELs

Author

Buell, D.A. ; Huntington, A.S. ; Koda, R. ; Hall, E. ; Nakagawa, S. ; Reddy, M. ; Coldren, L.A.

Author_Institution

California Univ., Santa Barbara, CA, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

447

Abstract

We have reviewed the recent research carried out to realize all-epitaxial VCSELs at long wavelengths. Shortcomings of the InP materials system were overcome by the use of AsSb-based alloys for DBRs and multiple active regions to combat low gain materials. The inclusion of InP spreading layers was seen to greatly improve the thermal properties of the devices. Aperturing schemes were presented which will improve these already world-class devices

Keywords

III-V semiconductors; indium compounds; laser mirrors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor lasers; surface emitting lasers; 1310 to 1550 nm; DBR; I-V curves; InP; all-epitaxial materials; aperturing schemes; lateral confinement; lattice-matched VCSEL; long wavelengths; molecular beam epitaxy; multiple active regions; selectively-etched active region; spreading layers; tunnel junctions; wide optical-bandwidth mirrors; Apertures; Dielectric substrates; Electric resistance; Gallium arsenide; Indium phosphide; Mirrors; Optical devices; Reflectivity; Thermal resistance; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.968865

Filename

968865