DocumentCode :
1963071
Title :
Punch Through Injection Structures for low voltage oscillation and low noise amplification
Author :
Delagebeaudeuf, D.
Author_Institution :
Thomson-CSF company, Laboratoire Central de Recherche - 91401 ORSAY - FRANCE
fYear :
1974
fDate :
10-13 Sept. 1974
Firstpage :
178
Lastpage :
181
Abstract :
Two punch through injection structures are proposed, the first one for low voltage oscillation, the second one for low noise amplification to achieve the first objective N+ P II N+ structures have been realized which gave interesting results. The second objective has been achieved with a P+ N- N P+ structure which can give a theoretical minimum noise figure of about 5 db. Because of technological difficulties this structure has not been realized yet.
Keywords :
Charge carrier processes; Costs; Diodes; Frequency; Gunn devices; Low voltage; Noise figure; Oscillators; Power generation; Signal detection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
Type :
conf
DOI :
10.1109/EUMA.1974.332036
Filename :
4130677
Link To Document :
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