DocumentCode :
1963075
Title :
Mocvd Selective Growth of Gaas Wires and Dots by Electron Beam Irradiation
Author :
Takahashi, T. ; Arakawa, Y. ; Nishioka, M. ; Ikoma, T.
Author_Institution :
Research Center for Advanced Science and Technology, University of Tokyo, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
19
Lastpage :
20
Keywords :
Electron beams; Gallium arsenide; MOCVD; Metallic superlattices; Optical device fabrication; Quantum dot lasers; Substrates; Temperature; US Department of Transportation; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664914
Filename :
664914
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1963075
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