• DocumentCode
    1963086
  • Title

    Above X-Band Performance of Baritt Diodes

  • Author

    Armstrong, B. Mervyn ; Christie, John ; Gamble, Harold S. ; Stewart, J.A.C. ; Wakefield, J.

  • Author_Institution
    Department of Electrical and Electronic Engineering, The Queen´s University of Belfast
  • fYear
    1974
  • fDate
    10-13 Sept. 1974
  • Firstpage
    182
  • Lastpage
    186
  • Abstract
    The predicted small signal noise measure and impedance of pnnp Baritt diodes is described for three values of n region doping density, Nd, at frequencies up to 20GHz. It is shown that for suitable values of Nd, small signal noise measures of order 10dB or less can be maintained up to 20GHz, and small signal negative resistances of at least 1 ohm. A large signal diode simulation is used in conjunction with a simple design approach, to predict the output power of pnnp oscillators at 15GHz. Assuming a diode series loss of 0.3 ohm, an output power of 17 mW is predicted for a diode with Nd = 1016cm¿3.
  • Keywords
    Density measurement; Diodes; Doping; Electrical resistance measurement; Frequency measurement; Impedance measurement; Neodymium; Noise measurement; Power generation; Predictive models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1974. 4th European
  • Conference_Location
    Montreux, Switzerland
  • Type

    conf

  • DOI
    10.1109/EUMA.1974.332037
  • Filename
    4130678
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1963086