In-situ depth monitoring of the deep reactive ion etch process

Author

Imura, Y. ; Li, B.X. ; Farmer, K.R.

Author_Institution

Microelectron. Res. Center, New Jersey Inst. of Technol., Newark, NJ, USA

fYear

2003

fDate

30 June-2 July 2003

Firstpage

381

Lastpage

383

Abstract

We describe a laser-based technique to monitor the time multiplexed deep reactive ion etching of silicon. Mask and substrate etch rates, as well as mask quality information, can be extracted simultaneously and in-situ using a single laser beam system.

Keywords

elemental semiconductors; laser materials processing; masks; silicon; sputter etching; Si; deep reactive ion etch process; depth monitoring; laser beam system; mask; silicon; substrate etch rates; time multiplexed deep reactive ion etching; Etching; Interference; Laser beams; Monitoring; Optical materials; Optical surface waves; Passivation; Resists; Silicon compounds; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial

ISSN

0749-6877

Print_ISBN

0-7803-7972-1

Type

conf

DOI

10.1109/UGIM.2003.1225775

Filename

1225775

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1963233