Title :
In-situ depth monitoring of the deep reactive ion etch process
Author :
Imura, Y. ; Li, B.X. ; Farmer, K.R.
Author_Institution :
Microelectron. Res. Center, New Jersey Inst. of Technol., Newark, NJ, USA
fDate :
30 June-2 July 2003
Abstract :
We describe a laser-based technique to monitor the time multiplexed deep reactive ion etching of silicon. Mask and substrate etch rates, as well as mask quality information, can be extracted simultaneously and in-situ using a single laser beam system.
Keywords :
elemental semiconductors; laser materials processing; masks; silicon; sputter etching; Si; deep reactive ion etch process; depth monitoring; laser beam system; mask; silicon; substrate etch rates; time multiplexed deep reactive ion etching; Etching; Interference; Laser beams; Monitoring; Optical materials; Optical surface waves; Passivation; Resists; Silicon compounds; Surface emitting lasers;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225775
