DocumentCode :
1963243
Title :
Towards first active clock based on mode-locked InGaN VECSEL with rubidium vapor cell saturable absorber
Author :
Xi Zeng ; Boiko, D.L.
Author_Institution :
Centre Suisse d´Electron. et de Microtech. (CSEM), Neuchâtel, Switzerland
fYear :
2012
fDate :
23-27 April 2012
Firstpage :
105
Lastpage :
108
Abstract :
We report the first detailed theoretical study of mode-locking dynamics in an active atomic clock based on a 420 nm wavelength, III-nitride vertical external cavity surface emitting laser with a 85Rb vapor cell as the intracavity saturable absorber.
Keywords :
III-V semiconductors; atomic clocks; gallium compounds; indium compounds; laser cavity resonators; laser mode locking; laser tuning; optical saturable absorption; rubidium; surface emitting lasers; wide band gap semiconductors; III-nitride vertical external cavity surface emitting laser; InGaN; Rb; active atomic clock; mode-locked VECSEL; mode-locking dynamics; rubidium vapor cell intracavity saturable absorber; wavelength 420 nm;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Frequency and Time Forum (EFTF), 2012
Conference_Location :
Gothenburg
Print_ISBN :
978-1-4673-1924-9
Type :
conf
DOI :
10.1109/EFTF.2012.6502344
Filename :
6502344
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1963243
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