Title :
Geometric Magnetoresistance (GMR) as a Tool for Characterizing InP Transferred Electron Devices
Author :
Devlin, W.J. ; Howes, M.J. ; Morgan, D.V.
Author_Institution :
Department of Electrical and Electronic Engineering, The University, Leeds LS2 9JT, England.
Abstract :
The GMR technique has been used to evaluate contact properties in completed InP transferred electron devices. Devices made on the same layer but with different contacts, Sn dot, Ag/Sn and Ag, have respectively displayed more enhanced Schottky barrier behaviour in their I-V characteristics and in GMR measurements as a function of bias, ¿(V). At room temperature a model involving a low height barrier, series resistance and a resistance in parallel with the barrier has been fitted to the measured I-V of an Ag/Sn contact device and the results used to correct the asymmetrical ¿(V) to give the bulk mobility variation.
Keywords :
Contact resistance; Electrical resistance measurement; Equivalent circuits; Giant magnetoresistance; Gunn devices; Indium phosphide; Microwave devices; Schottky barriers; Temperature; Tin;
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
DOI :
10.1109/EUMA.1974.332048
