Structural and Optical Properties of III-V Nanowires and Nanowire Heterostructures Grown by Metalorganic Chemical Vapour Deposition

Author

Joyce, H.J. ; Gao, Q. ; Kim, Y. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Australian Nat. Univ., Canberra

fYear

2007

fDate

Aug. 12 2007-July 16 2007

Firstpage

187

Lastpage

188

Abstract

We have investigated the structural and optical properties of III-V nanowires grown by metalorganic chemical vapour deposition. Binary GaAs, InAs and InP nanowires, and ternary InGaAs and AlGaAs nanowires, have been fabricated and characterised. A variety of axial and radial heterostructures have also been fabricated, including GaAs/AlGaAs core-multishell and GaAs/InGaAs superlattice nanowires. GaAs/AlGaAs core-shell nanowires exhibit strong photoluminescence as the AlGaAs shell passivates the GaAs nanowire surface reducing the surface nonradiative recombination.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; nanowires; passivation; photoluminescence; semiconductor growth; semiconductor quantum wires; semiconductor superlattices; surface recombination; GaAs-AlGaAs; GaAs-InGaAs; InAs; InP; core-multishell superlattice nanowires; heterostructures; metalorganic chemical vapour deposition; optical properties; passivation; photoluminescence; structural properties; surface nonradiative recombination; Chemical vapor deposition; Gallium arsenide; Gold; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Nanowires; Optical superlattices; Substrates; Temperature; MOCVD; heterostructure; nanowire;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMS and Nanophotonics, 2007 IEEE/LEOS International Conference on

Conference_Location

Hualien

Print_ISBN

978-1-4244-0641-8

Type

conf

DOI

10.1109/OMEMS.2007.4373903

Filename

4373903