Vertical cavity semiconductor optical amplifiers: comparison of Fabry-Perot and rate equations approaches

Author

Royo, P. ; Koda, R. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

467

Abstract

We demonstrate that the Fabry-Perot and the rate equation methods used in semiconductor optical amplifiers modeling are strictly equivalent provided calculation of the mirror losses is reconsidered in the latter approach. We show that the saturation input power is generally overestimated with the rate equation approach because the mirror losses are incorrectly calculated

Keywords

Fabry-Perot resonators; carrier density; laser cavity resonators; laser mirrors; laser theory; optical losses; quantum well lasers; semiconductor optical amplifiers; spontaneous emission; stimulated emission; surface emitting lasers; Fabry-Perot methods; Poynting theorem; carrier leakage; lossless dielectric media; mirror losses; nonradiative recombinations; planar stack; rate equation methods; recombination rates; saturation input power; semiconductor optical amplifiers modeling; spontaneous emission; stimulated emission; thin quantum wells; vertical cavity semiconductor optical amplifiers; vertical-cavity surface-emitting lasers; Dielectric losses; Equations; Fabry-Perot; Mirrors; Optical amplifiers; Optical feedback; Semiconductor laser arrays; Semiconductor optical amplifiers; Stimulated emission; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.968875

Filename

968875