DocumentCode
1963401
Title
40 WATT 16 GHz Pulsed Gunn Diode Oscillator
Author
Stevens, R. ; Tarrant, D. ; Myers, F.A.
fYear
1974
fDate
10-13 Sept. 1974
Firstpage
257
Lastpage
261
Abstract
Very high peak power levels at microwave frequencies can be generated from several semiconductor devices (Gunn diodes, L.S.A. mode devices, TRAPATT´s etc.) but some of these devices are only little removed from laboratory devices, and are limited in frequency. The Gunn device is the most practical and proven device but at 16 GHz is only capable of powers of around 10 watts peak. A simple technique is described which results in the addition of the powers and does not degrade the other parameters, such as R.F. rise time.
Keywords
Degradation; Gunn devices; High power microwave generation; Laboratories; Microwave frequencies; Microwave generation; Microwave oscillators; Power generation; Semiconductor devices; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1974. 4th European
Conference_Location
Montreux, Switzerland
Type
conf
DOI
10.1109/EUMA.1974.332052
Filename
4130693
Link To Document