DocumentCode :
1963433
Title :
Narrow-linewidth, high-brightness laser diode arrays
Author :
Schoenfelder, A. ; DeMars, S.D. ; Lang, R.J.
Author_Institution :
SDL Inc., San Jose, CA, USA
fYear :
1997
fDate :
11-13 Aug. 1997
Firstpage :
72
Lastpage :
73
Abstract :
High-brightness, high-power diode laser arrays are expanding their role in pumping multilevel solid-state laser systems. Various advanced solid-state laser systems take advantage of strong but narrow absorption lines and thus, demand a very small linewidth of the pump source. Conventional diode laser bars cover only the lower part of required brightness range and have typically a broad emission spectrum. In this work, we describe a laser diode array source consisting of broad area laser diodes utilizing an angled-grating distributed feedback (/spl alpha/-DFB) structure operating at a wavelength of 960.5 nm, which is an absorption line for Er:YAG solid-state material lasing near 3 /spl mu/m. Because the gain for this laser transition is quite low, the performance is strongly dependent upon the spectral and spatial quality of the pump beam. In order to obtain adequate power from the laser, a pump source is required which could deliver several watts of power into a 50 /spl mu/m spot within less than 0.3 NA with a spectral bandwidth of <1 nm at precisely 960.5 nm.
Keywords :
brightness; distributed feedback lasers; optical pumping; semiconductor laser arrays; solid lasers; spectral line breadth; 3 mum; 50 mum; 960.5 nm; Er:YAG solid-state material; YAG:Er; YAl5O12:Er; absorption line; angled-grating distributed feedback structure; broad area laser diodes; gain; high-brightness laser diode arrays; high-power diode laser array; laser transition; multilevel solid-state laser systems; narrow absorption lines; narrow-linewidth; pump source; spatial quality; spectral bandwidth; spectral quality; Absorption; Bars; Diode lasers; Distributed feedback devices; Laser excitation; Laser transitions; Optical arrays; Pump lasers; Semiconductor laser arrays; Solid lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
Type :
conf
DOI :
10.1109/LEOSST.1997.619227
Filename :
619227
Link To Document :
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