High-power, diffraction-limited InGaAsP flared unstable resonators at 840 nm

Author

Wong, V.V. ; Hanmin Zhao ; O´Brien, S. ; Ziari, M. ; Lang, R.J. ; Verdiell, J.-M. ; Archambault, J.-L.

Author_Institution

SDL Inc., San Jose, CA, USA

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

74

Lastpage

75

Abstract

We report on the high-power, diffraction-limited performance of InGaAsP/GaAs flared devices in three configurations: a Fabry-Perot (FP) unstable resonator, a fiber Bragg grating wavelength-stabilized laser and an external grating tunable laser. In all three configurations over 1.0 W CW diffraction-limited was obtained with up to 2.0 W CW diffraction-limited from FP unstable resonators. In addition, temperature-insensitive operation and wavelength tunability was achieved using the fiber Bragg grating and external grating, respectively.

Keywords

Fabry-Perot resonators; III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; laser cavity resonators; laser frequency stability; laser tuning; optical fibres; quantum well lasers; 1.0 W; 2.0 W; 840 nm; CW; Fabry-Perot unstable resonator; InGaAsP-GaAs; InGaAsP/GaAs flared devices; diffraction-limited InGaAsP flared unstable resonators; external grating tunable laser; fiber Bragg grating wavelength-stabilized laser; high-power; temperature-insensitive operation; wavelength tunability; Bragg gratings; Diffraction gratings; Fiber gratings; Fiber lasers; Gallium arsenide; Optical diffraction; Optical resonators; Power generation; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619228

Filename

619228