MBE growth of GaN

Author

Johnson, M.A.L. ; Zhonghai Yu ; El-Masry, N.A., Jr. ; Cook, J.W., Jr. ; Schetzina, J.F.

Author_Institution

Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

3

Lastpage

4

Abstract

GaN has been grown by MBE at growth rates up to 1 /spl mu/m/hr and at temperatures up to 1000 C using a new rf nitrogen plasma source developed by EPI Inc. The EPI source employs a pyrolytic boron nitride plasma reaction chamber that eliminates gas leakage. This "unibulb" construction gives rise to higher pressures and longer confinement times within the reaction chamber. Optical IR emission spectra show that the nitrogen plasma is very rich in nitrogen atoms.

Keywords

III-V semiconductors; gallium compounds; infrared spectra; molecular beam epitaxial growth; optical films; plasma CVD; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum wells; 1000 C; GaN; MBE growth; gas leakage; growth rates; nitrogen atoms; nitrogen plasma; optical IR emission spectra; pyrolytic boron nitride plasma reaction chamber; reaction chamber; rf nitrogen plasma source; unibulb construction; Atom optics; Gallium nitride; Indium; Molecular beam epitaxial growth; Nitrogen; Optical films; Plasma confinement; Plasma sources; Plasma temperature; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619233

Filename

619233