DocumentCode
1963606
Title
Performance impact of through-silicon vias (TSVs) in three-dimensional technology measured by SRAM ring oscillators
Author
Kuang, Jente B. ; Jenkins, Keith A. ; Stawiasz, Kevin ; Schaub, J.
Author_Institution
IBM Austin Res. Lab., Austin, TX, USA
fYear
2013
fDate
16-20 Sept. 2013
Firstpage
419
Lastpage
422
Abstract
A compact SRAM ring oscillator circuit for local, in-situ, probing of device performance is described. Applied to three-dimensional integrated circuit technology (3DI), the circuit is used to determine if there is any effect on SRAM performance when the cells are placed in close proximity to through-silicon vias (TSVs).
Keywords
SRAM chips; oscillators; three-dimensional integrated circuits; SRAM ring oscillators; TSV; three-dimensional integrated circuit technology; three-dimensional technology; through-silicon vias; Annealing; Frequency measurement; Random access memory; Ring oscillators; Semiconductor device measurement; Three-dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
ESSCIRC (ESSCIRC), 2013 Proceedings of the
Conference_Location
Bucharest
ISSN
1930-8833
Print_ISBN
978-1-4799-0643-7
Type
conf
DOI
10.1109/ESSCIRC.2013.6649162
Filename
6649162
Link To Document