Optimized conditions for flow modulation epitaxy of GaN

Flow modulation epitaxy (FME) has been employed previously to synthesize III-V arsenides and phosphides. However, the ability of FME to extend growth to lower temperatures than those required for conventional organometallic vapor phase epitaxy (OMVPE) has only recently been explored for the synthesis of nitride based semiconductors. Because, in part, of the importance of low temperature growth to the synthesis of indium-containing group III-nitrides, this growth technique should be explored further. In this paper we report on the FME of group III-nitride compounds on sapphire and silicon carbide substrates.