DocumentCode
1963769
Title
A comparison of electrical performance between a wire bonded and a flip chip CSP package
Author
Pan, S.J. ; Kapoor, R. ; Sun, Anthony Y S ; Wang, C.K. ; Low, H.G.
Author_Institution
Adv. Package & Technol. Center, United Test & Assembly Center Ltd., Singapore, Singapore
fYear
2003
fDate
16-18 July 2003
Firstpage
125
Lastpage
130
Abstract
In this paper, electrical simulations are performed to characterize a wire-bonded window CSP (wCSPTM) package and a flip chip CSP (fcCSP) package designed for the same die. Results indicate that fcCSP has a slightly wider bandwidth than window CSP. Although, window CSP has a larger parasitic resistance and inductance for the target nets, it has a lower crosstalk in terms of peak-peak voltage due to shorter parallel traces. An optimized flip chip design is proposed and the results show a vast improvement over the wire bonded CSP package. Parametric studies are also performed to investigate the effects of bond wires with different diameter and horizontal distance, and variations in signal traces. These results provide useful insights on design and process selection for high-performance semiconductor packages.
Keywords
chip scale packaging; flip-chip devices; lead bonding; semiconductor device packaging; bond wires; electrical performance; electrical simulation; flip chip CSP package; flip chip design; horizontal distance; inductance; larger parasitic resistance; optimisation; peak-peak voltage; semiconductor packages; shorter parallel traces; signal traces; window CSP; wire bonded CSP package; Bandwidth; Bonding; Chip scale packaging; Crosstalk; Electric resistance; Flip chip; Inductance; Semiconductor device packaging; Voltage; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. IEEE/CPMT/SEMI 28th International
ISSN
1089-8190
Print_ISBN
0-7803-7933-0
Type
conf
DOI
10.1109/IEMT.2003.1225888
Filename
1225888
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