• DocumentCode
    1964174
  • Title

    Millimeter Wave Oscillations from Tunnett Diodes

  • Author

    Nishizawa, Jun-ichi ; Ohmi, Tadahiro ; Sakai, Toshi-aki

  • fYear
    1974
  • fDate
    10-13 Sept. 1974
  • Firstpage
    449
  • Lastpage
    453
  • Abstract
    Space and time dispersions of carrier distribution included in an avalanche build up process are discussed in Si and GaAs, especially concentrating on exchange frequency from an avalanche to a tunneling in a carrier injection mechanism in transit time diodes. GaAs multilayer structure has been pointed out favorable to realize the relatively low exchange frequency. GaAs high-low-high multilayer diodes (M n+ n n+ ) are fabricated by successive liquid phase epitaxy and exhibit oscillations due to tunnel injection at 92 GHz.
  • Keywords
    Charge carrier processes; Epitaxial growth; Equations; Gallium arsenide; Ionization; Microwave frequencies; Nonhomogeneous media; Schottky diodes; Substrates; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1974. 4th European
  • Conference_Location
    Montreux, Switzerland
  • Type

    conf

  • DOI
    10.1109/EUMA.1974.332091
  • Filename
    4130732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1964174