Radiation response of ADVANTOX/sup TM/-190 SOI material

Author

Liu, S.T. ; Jenkins, W.C. ; Hughes, H.L.

Author_Institution

Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA

fYear

1998

fDate

5-8 Oct. 1998

Firstpage

91

Lastpage

92

Abstract

Summary form only given. In this paper, we describe the material properties and radiation properties of ADVANTOX/sup TM/-190 SOI material. This is a new ADVANTOX/sup TM/ with a thicker BOX at 190 nm. The ADVANTOX/sup TM/-190 SOI material has similar physical properties to ADVANTOX/sup TM/-120, such as low HF defect density and low dislocation density. Partially depleted SOI CMOS devices were fabricated to evaluate the radiation and speed performance of this new SOI material.

Keywords

CMOS integrated circuits; buried layers; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); silicon-on-insulator; 120 nm; 190 nm; ADVANTOX-190 SOI material; BOX thickness; HF defect density; SOI material; Si-SiO/sub 2/; dislocation density; material properties; partially depleted SOI CMOS devices; physical properties; radiation performance; radiation properties; radiation response; speed performance; Application specific integrated circuits; CMOS technology; Degradation; Laboratories; Large Hadron Collider; Radiation hardening; Random access memory; Silicon on insulator technology; Ultra large scale integration; Weapons;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1998. Proceedings., 1998 IEEE International

Conference_Location

Stuart, FL, USA

ISSN

1078-621X

Print_ISBN

0-7803-4500-2

Type

conf

DOI

10.1109/SOI.1998.723126

Filename

723126