Title :
Radiation response of ADVANTOX/sup TM/-190 SOI material
Author :
Liu, S.T. ; Jenkins, W.C. ; Hughes, H.L.
Author_Institution :
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
Abstract :
Summary form only given. In this paper, we describe the material properties and radiation properties of ADVANTOX/sup TM/-190 SOI material. This is a new ADVANTOX/sup TM/ with a thicker BOX at 190 nm. The ADVANTOX/sup TM/-190 SOI material has similar physical properties to ADVANTOX/sup TM/-120, such as low HF defect density and low dislocation density. Partially depleted SOI CMOS devices were fabricated to evaluate the radiation and speed performance of this new SOI material.
Keywords :
CMOS integrated circuits; buried layers; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); silicon-on-insulator; 120 nm; 190 nm; ADVANTOX-190 SOI material; BOX thickness; HF defect density; SOI material; Si-SiO/sub 2/; dislocation density; material properties; partially depleted SOI CMOS devices; physical properties; radiation performance; radiation properties; radiation response; speed performance; Application specific integrated circuits; CMOS technology; Degradation; Laboratories; Large Hadron Collider; Radiation hardening; Random access memory; Silicon on insulator technology; Ultra large scale integration; Weapons;
Conference_Titel :
SOI Conference, 1998. Proceedings., 1998 IEEE International
Conference_Location :
Stuart, FL, USA
Print_ISBN :
0-7803-4500-2
DOI :
10.1109/SOI.1998.723126
