DocumentCode :
1964193
Title :
Effects of Tunneling on High Efficiency IMPATT Avalanche Diodes
Author :
Chive, M. ; Constant, E. ; Pribetich, J. ; Lefebvre, M.
Author_Institution :
CENTRE HYPERFREQUENCES ET SEMICONDUCTEURS, Equipe Associée au C.N.R.S. n° 454, UNIVERSITE DE LILLE I, BP 36 - 59650 VILLENEUVE D´´ASCQ - FRANCE
fYear :
1974
fDate :
10-13 Sept. 1974
Firstpage :
454
Lastpage :
458
Abstract :
We study theoretically and experimentally the effect of a tunnel injection on high efficiency IMPATT avalanche diodes characterized by high low or low high low doping profile. Taking into account effects of tunneling some characteristics usually observed of such high efficiency IMPATT oscillator are explained. Then some criteria are deduced to select the best doping profile in order to obtain high efficiency in the centimeter wave region.
Keywords :
Doping profiles; Equations; Impedance; Microwave devices; Oscillators; Radio frequency; Semiconductor diodes; Temperature; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
Type :
conf
DOI :
10.1109/EUMA.1974.332092
Filename :
4130733
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1964193
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