• DocumentCode
    1964218
  • Title

    A Ka Band Avalanche Diode Up-Converter

  • Author

    Vaterkowski, J.L. ; Constant, E. ; Druelle, Y.

  • Author_Institution
    CENTRE HYPERFREQUENCES ET SEMICONDUCTEURS, Equipe Associée au C.N.R.S. n° 454, UNIVERSITE DE LILLE 1, BP 36 - 59650 VILLENEUVE D´´ASCQ - FRANCE
  • fYear
    1974
  • fDate
    10-13 Sept. 1974
  • Firstpage
    459
  • Lastpage
    463
  • Abstract
    Recent experimental and theoretical results on a silicon avalanche diode up-converter are reported. A simplified theoretical analysis is developed in order to design the semiconductor device. Based upon the somewhat ideaLized Read model, this theory explains the main parametric effect used for frequency conversion. Experimental circuits were built and have allowed to obtain a good agreement between experimental and theoretical results. Up-conversion is achieved with a maximum output power of 23 dBm and about 0 dB conversion loss. The DC bias, intermediate frequency power (IoF) and transponded frequency dependence are studied.
  • Keywords
    Circuit testing; Coaxial components; Equations; Fasteners; Filters; Frequency conversion; Power generation; Semiconductor diodes; Silicon; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1974. 4th European
  • Conference_Location
    Montreux, Switzerland
  • Type

    conf

  • DOI
    10.1109/EUMA.1974.332093
  • Filename
    4130734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1964218