Title :
A Ka Band Avalanche Diode Up-Converter
Author :
Vaterkowski, J.L. ; Constant, E. ; Druelle, Y.
Author_Institution :
CENTRE HYPERFREQUENCES ET SEMICONDUCTEURS, Equipe Associée au C.N.R.S. n° 454, UNIVERSITE DE LILLE 1, BP 36 - 59650 VILLENEUVE D´´ASCQ - FRANCE
Abstract :
Recent experimental and theoretical results on a silicon avalanche diode up-converter are reported. A simplified theoretical analysis is developed in order to design the semiconductor device. Based upon the somewhat ideaLized Read model, this theory explains the main parametric effect used for frequency conversion. Experimental circuits were built and have allowed to obtain a good agreement between experimental and theoretical results. Up-conversion is achieved with a maximum output power of 23 dBm and about 0 dB conversion loss. The DC bias, intermediate frequency power (IoF) and transponded frequency dependence are studied.
Keywords :
Circuit testing; Coaxial components; Equations; Fasteners; Filters; Frequency conversion; Power generation; Semiconductor diodes; Silicon; Varactors;
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
DOI :
10.1109/EUMA.1974.332093
