DocumentCode
1964236
Title
Circuit Loss Characterisation with an IMPATT Diode
Author
Tozer, R.C. ; Charlton, R. ; Hobson, G.S.
Author_Institution
Department of Electronic & Electrical Engineering, University of Sheffield
fYear
1974
fDate
10-13 Sept. 1974
Firstpage
464
Lastpage
467
Abstract
A convenient technique is described to measure the internal circuit loss, the load conductance and equivalent circuit susceptances of an IMPATT oscillator. The diode is biased just below its breakdown voltage and is used as a resonant reflection absorber. From these frequency dependent characteristics we are able to separate the load and internal circuit loss conductances providing that the circuit is singly resonant. The experimental technique does not require any mechanical disturbance of the diode in contrast to many network analyser techniques. It also allows a rapid and simple confirmation that the circuit is singly resonant.
Keywords
Breakdown voltage; Displays; Equivalent circuits; Frequency; Loss measurement; RLC circuits; Reflection; Resonance; Semiconductor device measurement; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1974. 4th European
Conference_Location
Montreux, Switzerland
Type
conf
DOI
10.1109/EUMA.1974.332094
Filename
4130735
Link To Document