Radiation properties of UNIBOND/sup TM/ with 200 nm buried oxide [SOI wafers]

Summary form only given. Thin BOX SOI materials, such as ITOX and ADVANTOX, have generated great interest lately because these materials are good candidates for low power electronic applications. We recently evaluated the radiation properties of ADVANTOX (/spl ap/120 nm BOX) and found a little speed performance degradation for 0.8 /spl mu/m CMOS devices as compared with full dose SIMOX, which we attributed to the thin BOX (Liu et al. 1997). Since the top silicon and the buried oxide of UNIBOND/sup TM/ SOI material can be controlled easily, as discussed in a recent publication (Bruel et al. 1995), we report on "as-received" 200 nm BOX UNIBOND/sup TM/ SOI substrates to assess their performance for the first time as compared to standard 400 nm BOX UNIBOND/sup TM/ and full dose SIMOX SOI substrates. The evaluation is based on a co-processed lot using Honeywell\´s 0.8 /spl mu/m radiation hard CMOS processing.